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TYPICAL PERFORMANCE CURVES (R)
APT30GP60JDQ1 600V
APT30GP60JDQ1
POWER MOS 7 IGBT
(R)
E G C
E
The POWER MOS 7(R) IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. * Low Conduction Loss * Low Gate Charge * Ultrafast Tail Current shutoff * 100 kHz operation @ 400V, 23A * 200 kHz operation @ 400V, 15A * SSOA Rated
S
OT
22
7
ISOTOP (R)
"UL Recognized"
file # E145592
C G E
MAXIMUM RATINGS
Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 110C Pulsed Collector Current
1
All Ratings: TC = 25C unless otherwise specified.
APT30GP60JDQ1 UNIT Volts
600 20 67 31 120 120A @ 600V 245 -55 to 150 300
Amps
@ TC = 150C
Switching Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Watts C
STATIC ELECTRICAL CHARACTERISTICS
Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 500A) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25C) MIN TYP MAX Units
600 3 4.5 2.2 2.1 500
2
6 2.7
Collector-Emitter On Voltage (VGE = 15V, I C = 30A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 30A, Tj = 125C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25C)
2
Volts
I CES I GES
Gate-Emitter Leakage Current (VGE = 20V)
100
nA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
050-7452
APT Website - http://www.advancedpower.com
Rev A
9-2005
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125C)
A
3000
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) td(off) tf Eon1 Eon2 td(on) tr td(off) tf Eon1 Eon2 Eoff Eoff tr Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
3
APT30GP60JDQ1
Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VCE = 300V I C = 30A TJ = 150C, R G = 5, VGE = VGE = 15V MIN TYP MAX UNIT pF V nC
3200 295 20 7.5 90 20 30 120 13 18 55 46 260 335 250 13 18 85 80 260 510 520 750 J
ns ns A
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy
44 55 4 5
15V, L = 100H,VCE = 600V Inductive Switching (25C) VCC = 400V VGE = 15V I C = 30A RG = 5
Turn-on Switching Energy (Diode)
6
TJ = +25C Inductive Switching (125C) VCC =400V VGE = 15V I C = 30A RG = 5
J 330
Turn-on Switching Energy (Diode)
6
TJ = +125C
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol RJC RJC WT Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight MIN TYP MAX UNIT C/W gm
.51 1.7 29.2
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clam ped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
APT Reserves the right to change, without notice, the specifications and information contained herein.
050-7452
Rev A
9-2005
TYPICAL PERFORMANCE CURVES
60 50
TJ = -55C
60 50
TJ = -55C
APT30GP60JDQ1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
40 30 20 10 0
TJ = 25C
TJ = 125C
40 30 20 10 0
TJ = 25C
TJ = 125C
200 180
IC, COLLECTOR CURRENT (A)
FIGURE 1, Output Characteristics(TJ = 25C)
250s PULSE TEST<0.5 % DUTY CYCLE
0 0.5 1.0 1.5 2.0 2.5 3.0 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
16
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (TJ = 125C)
I = 30A C T = 25C
J
0 0.5 1.0 1.5 2.0 2.5 3.0 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
160 140 120 100 80 60 40 20 0
0
TJ = -55C
14 12 10 8 6 4 2 0
0
VCE = 120V
VCE = 300V
VCE = 480V
TJ = 25C
TJ = 125C
2 4 6 8 10 12 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
10
20
30 40 50 60 70 80 GATE CHARGE (nC)
90 100
FIGURE 4, Gate Charge
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
3.5 3.0 2.5 IC = 30A 2.0 1.5 1.0 0.5
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
IC = 60A
IC = 60A IC = 30A IC = 15A
IC = 15A
8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
0
6
-25 0 25 50 75 100 125 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature
0 -55
BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED)
1.20
IC, DC COLLECTOR CURRENT(A)
90 80 70 60 50 40
9-2005 050-7452 Rev A
1.15 1.10 1.05 1.00 0.95 0.90 0.85
30 20 10
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature
0.80 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Breakdown Voltage vs. Junction Temperature
0 -50
20
100
APT30GP60JDQ1
16
td (OFF), TURN-OFF DELAY TIME (ns)
td(ON), TURN-ON DELAY TIME (ns)
80
VGE =15V,TJ=125C
VGE = 15V
12
60
8
40
VGE =15V,TJ=25C
4 VCE = 400V
0 10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current
50
RG = 5, L = 100H, VCE = 400V
0
TJ = 25C, TJ =125C RG = 5 L = 100 H
20
0 10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current
100
RG = 5, L = 100H, VCE = 400V
0
VCE = 400V RG = 5 L = 100 H
40
80
tf, FALL TIME (ns)
tr, RISE TIME (ns)
30
60
TJ = 125C, VGE = 15V
20
40
TJ = 25C, VGE = 15V
10
TJ = 25 or 125C,VGE = 15V
20
0 10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current
1400
0
0 10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current
1600
0
EOFF, TURN OFF ENERGY LOSS (J)
EON2, TURN ON ENERGY LOSS (J)
1200 1000 800 600 400 200 0
V = 400V CE V = +15V GE R = 5
G
1400 1200 1000 800 600 400 200 0
= 400V V CE = +15V V GE R = 5
G
TJ = 125C,VGE =15V
TJ = 125C, VGE = 15V
TJ = 25C,VGE =15V
TJ = 25C, VGE = 15V
0 10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current
4000
0 10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current
1600
= 400V V CE = +15V V GE R = 5
G
SWITCHING ENERGY LOSSES (J)
3500 3000 2500 2000 1500 1000 500 0
SWITCHING ENERGY LOSSES (J)
= 400V V CE = +15V V GE T = 125C
J
Eoff,60A Eon2,60A
1400 1200 1000 800 600 400 200 0
Eon2,60A Eoff,60A
9-2005
Eon2,30A Eoff,30A Eoff,15A Eon2,15A
Eon2,30A Eon2,15A
Eoff,30A
Rev A
050-7452
10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance
0
25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
0
Eoff,15A
TYPICAL PERFORMANCE CURVES
10,000 Cies 1,000 500 100 50 10 Cres C0es IC, COLLECTOR CURRENT (A)
140 120 100 80 60 40 20
APT30GP60JDQ1
C, CAPACITANCE ( F)
P
1 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage
0 100 200 300 400 500 600 700 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area
0
0.60 0.50 0.40 0.30 0.20 0.10 0 0.9
ZJC, THERMAL IMPEDANCE (C/W)
0.7
0.5
Note:
PDM
0.3
t1 t2
0.1 0.05 10-5 10-4
SINGLE PULSE
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
RC MODEL
1.0
Junction temp. (C)
0.135
0.00659F
300 FMAX, OPERATING FREQUENCY (kHz)
Power (watts)
100 50
0.217
0.0999F
F
10
T = 125C J T = 75C C D = 50 % V = 400V CE R = 5
G
0.158 Case temperature. (C)
0.575F
= min (fmax, fmax2) 0.05 fmax1 = td(on) + tr + td(off) + tf
max
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
fmax2 = Pdiss =
Pdiss - Pcond Eon2 + Eoff TJ - TC RJC
10 20 30 40 50 60 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
1
0
050-7452
Rev A
9-2005
APT30GP60JDQ1
APT15DQ60
10% td(on) tr
Gate Voltage TJ = 125C
V CC
IC
V CE
Collector Current 90% 5% CollectorVoltage
A D.U.T.
5%
Switching Energy
10%
Figure 21, Inductive Switching Test Circuit
Figure 22, Turn-on Switching Waveforms and Definitions
VTEST
90%
*DRIVER SAME TYPE AS D.U.T.
Gate Voltage
TJ = 125C
A V CE 100uH IC V CLAMP A DRIVER* D.U.T. B
td(off) 90% tf 10%
Switching Energy
Collector Voltage
0
Collector Current
Figure 23, Turn-off Switching Waveforms and Definitions
Figure 24, EON1 Test Circuit
050-7452
Rev A
9-2005
TYPICAL PERFORMANCE CURVES
APT30GP60JDQ1
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
Symbol IF(AV) IF(RMS) IFSM Symbol VF Characteristic / Test Conditions Maximum Average Forward Current (TC = 118C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45C, 8.3ms) Characteristic / Test Conditions IF = 30A Forward Voltage IF = 60A IF = 30A, TJ = 125C MIN
All Ratings: TC = 25C unless otherwise specified.
APT30GP60JDQ1(G) UNIT Amps
15 26 110
TYP MAX UNIT Volts
STATIC ELECTRICAL CHARACTERISTICS 2.5 3.2 2.1
MIN TYP MAX UNIT ns nC
DYNAMIC CHARACTERISTICS
Symbol trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Characteristic Test Conditions Reverse Recovery Time I = 1A, di /dt = -100A/s, V = 30V, T = 25C F F R J Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current
1.80 ZJC, THERMAL IMPEDANCE (C/W) 1.60 1.40 1.20 1.00 0.80 0.60 0.40 0.20 0 10
-5
15 19 21 2 105 250 5 55 420 15 -
IF = 15A, diF/dt = -200A/s VR = 400V, TC = 25C
-
Amps ns nC Amps ns nC Amps
IF = 15A, diF/dt = -200A/s VR = 400V, TC = 125C
IF = 15A, diF/dt = -1000A/s VR = 400V, TC = 125C
0.9
0.7
0.5
Note:
PDM
0.3 0.1 0.05 10-4
t1 t2
SINGLE PULSE
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 25a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
RC MODEL Junction temp (C) 0.913 C/W 0.00132 J/C
0.573 C/W
0.0302 J/C
Case temperature (C)
FIGURE 25b, TRANSIENT THERMAL IMPEDANCE MODEL
050-7452
0.216 C/W
0.512 J/C
Rev A
Power (watts)
9-2005
60 50 IF, FORWARD CURRENT (A) TJ = 175C 40 30 20 10 0 TJ = 125C trr, REVERSE RECOVERY TIME (ns)
140 120 30A 100 80 60 40 20 0 15A
APT30GP60JDQ1
T =125C J V =400V
R
7.5A
TJ = -55C 0
TJ = 25C
1 2 3 4 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 26. Forward Current vs. Forward Voltage
T =125C J V =400V
R
0 200 400 600 800 1000 1200 1400 1600 -diF /dt, CURRENT RATE OF CHANGE(A/s) Figure 27. Reverse Recovery Time vs. Current Rate of Change 25 IRRM, REVERSE RECOVERY CURRENT (A)
T =125C J V =400V
R
700 Qrr, REVERSE RECOVERY CHARGE (nC) 600 500 400 300 200 100 0
30A
20
30A
15
15A
10
15A 7.5A
7.5A
5
0 200 400 600 800 1000 1200 1400 1600 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 28. Reverse Recovery Charge vs. Current Rate of Change
0 200 400 600 800 1000 1200 1400 1600 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 29. Reverse Recovery Current vs. Current Rate of Change 30 25 20
Duty cycle = 0.5 T =175C
J
0
1.2
Kf, DYNAMIC PARAMETERS (Normalized to 1000A/s)
1.0 0.8 IRRM 0.6 trr 0.4 0.2 0.0 Qrr
trr
Qrr
IF(AV) (A)
15 10 5 0
25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 30. Dynamic Parameters vs. Junction Temperature
0
75 100 125 150 175 Case Temperature (C) Figure 31. Maximum Average Forward Current vs. CaseTemperature
25
50
90
CJ, JUNCTION CAPACITANCE (pF)
80 70 60 50 40 30 20 10
10 100 200 VR, REVERSE VOLTAGE (V) Figure 32. Junction Capacitance vs. Reverse Voltage
Rev A
9-2005
0
1
050-7452
TYPICAL PERFORMANCE CURVES
+18V 0V diF /dt Adjust
Vr
APT6017LLL
APT30GP60JDQ1
D.U.T. 30H
trr/Qrr Waveform
PEARSON 2878 CURRENT TRANSFORMER
Figure 33. Diode Test Circui t
1 2 3 4
IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero
1
4
5 3 2
trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr.
0.25 IRRM
5
Figure 34, Diode Reverse Recovery Waveform and Definitions
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
* Emitter/Anode
Collector/Cathode
* Emitter/Anode terminals are shorted internally. Current handling capability is equal for either Emitter/Anode terminal.
* Emitter/Anode Dimensions in Millimeters and (Inches)
Gate
ISOTOP(R) is a Registered Trademark of SGS Thomson. APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7452
Rev A
9-2005
3.3 (.129) 3.6 (.143)
1.95 (.077) 2.14 (.084)

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